دیتاشیت STQ1HNK60R-AP
مشخصات دیتاشیت
| نام دیتاشیت | STx1(H)NK60(-1,R) |
|---|---|
| حجم فایل | 477.541 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 16 |
دانلود دیتاشیت STx1(H)NK60(-1,R) |
STx1(H)NK60(-1,R) Datasheet |
|---|
مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STQ1HNK60R-AP
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 3W
- Total Gate Charge (Qg@Vgs): 10nC@10V
- Drain Source Voltage (Vdss): 600V
- Input Capacitance (Ciss@Vds): 156pF@25V
- Continuous Drain Current (Id): 400mA
- Gate Threshold Voltage (Vgs(th)@Id): 3.7V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 3.8pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 7.3Ω@10V,500mA
- Package: TO-92
- Manufacturer: STMicroelectronics
- Series: SuperMESH™
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 156pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 3W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Base Part Number: STQ1
- detail: N-Channel 600V 400mA (Tc) 3W (Tc) Through Hole TO-92-3
